Repositório do Conhecimento Institucional do Centro Universitário FEI
 

Engenharia Elétrica

URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/21

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20152

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Periódico: search.filters.ispartof.SBMicro 2015 - 30th Symposium on Microelectronics Technology and DevicesAssunto: search.filters.subject.Graded channels

Resultados da Pesquisa

Agora exibindo 1 - 2 de 2
  • N/D
    Artigo de evento 3 Citação(ões) na Scopus
    Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications
    (2015-10-13) ASSALTI, R.; Marcelo Antonio Pavanello; FLANDRE, D.; Michelly De Souza
    This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
  • N/D
    Artigo de evento 1 Citação(ões) na Scopus
    On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs
    (2015-08-31) MOLTO, A. R.; Rodrigo Doria; Michelly De Souza; Marcelo Antonio Pavanello
    This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density and the KF constant, which can be used in BSIM SPICE-like models, are determined.