On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-08-31
Texto completo (DOI)
Periódico
SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
1
Autores
MOLTO, A. R.
Rodrigo Doria
Michelly De Souza
Marcelo Antonio Pavanello
Orientadores
Resumo
This paper deals with the Low-Frequency Noise (LFN) behavior of submicron Graded-Channel SOI nMOSFETs, fabricated in a 150 nm Technology from Oki Semiconductors as a continuation from previous works, looking at the noise sources of these devices. The effects of channel length reduction and gate bias dependence on the LFN of devices biased in linear regime are investigated. The effective trap density and the KF constant, which can be used in BSIM SPICE-like models, are determined.
Citação
MOLTO, A. R.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A. On the origin of low-frequency noise of submicron Graded-Channel fully depleted SOI nMOSFETs. In. SIMPOSIO DE TECNOLOGIA E DISPOSITIVOS MICROELETRÔNICOS, SBMICRO, 30, 2015, Salvador: SBMicro 2015 - 30º Simpósio de Tecnologia e Dispositivos Microeletrônicos, 2015.
Palavras-chave
Keywords
graded channel; Low Frequecy Noise; Noise; SOI; submicron
Assuntos Scopus
Channel length; Fully depleted SOI; Gate bias dependence; Graded channels; Low Frequecy Noise; Low-Frequency Noise; Noise; Submicron