Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications
N/D
Tipo de produção
Artigo de evento
Data de publicação
2015-10-13
Texto completo (DOI)
Periódico
SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
ASSALTI, R.
Marcelo Antonio Pavanello
FLANDRE, D.
Michelly De Souza
Orientadores
Resumo
This paper compares the performance of Asymmetric Self-Cascode and Graded-Channel SOI nMOSFETs, both proposed to improve the analog performance of fully depleted SOI nMOSFETs. The differences at device level are evaluated and the impact of their application in basic analog circuits, i.e. common-source amplifier, source-follower and common-source current mirror are explored through experimental results.
Citação
ASSALTI, R.; PAVANELLO, M. A.; FLANDRE, D.; DE SOUZA, M. Asymmetric Self-Cascode versus Graded-Channel SOI nMOSFETs for analog applications. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices. Oct. 2015.
Palavras-chave
Keywords
Asymmetric Self-Cascode; Common-source amplifier; Common-source current mirror; FD SOI nMOSFETs; Graded-Channel; Source-follower
Assuntos Scopus
Common source; Common source amplifier; Graded channels; Self-cascode; SOI n-MOSFETs; Source followers