Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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6 resultados
Resultados da Pesquisa
- Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects(2023) ALLEGRO, P. R. P.; TOUFEN, D. L.; AGUIAR, V. A. P.; SANTOS, L. S. A.; OLIVEIRA W. N.; ADDED, N.; MEDINA, N. H.; MACCHIONE, E. L. A.; ALBERTON , S. G.; Marcilei Aparecida Guazzelli; MELO, M. A. A.; OLIVEIRA, J. A.© 2023This article presents a novel application of the k-means unsupervised machine learning algorithm to the problem of identifying single event transient (SET) events from noise during heavy-ion irradiation experiments of an electronic device. We explore the performance of the k-means algorithm by analyzing experimental datasets of SET events produced by several heavy-ions irradiations of a MOSFET transistor. Data anomalies and effectiveness of the chosen features (mean, standard deviation, skewness, and kurtosis) were investigated using the Isolation Forest and Random Forest algorithms, respectively. The results show a high capability of the K-means algorithm to identify SET events from noise using the first four statistical moments as features, allowing in the future the use of this method for in situ event detection and diagnosis without previous algorithm training or pre-analysis of the experimental data.
- X-ray radiation effects in overlapping circular-gate MOSFET's(2011-09-23) DE LIMA, J. A.; Marcilei Aparecida Guazzelli; CIRNE, K. H.; Roberto Santos; MEDINA, N. H.IV-characteristics from ELT Overlapping Circular-Gate Transistors (O-CGT's) and rectangular-gate transistors are cross-checked after X-ray exposure. No degradation on O-CGT subthreshold behavior observed for doses up to 2.3 Grad. Devices were prototyped on standard 0.35 μm CMOS process. © 2011 IEEE.
- Boosting the total ionizing dose tolerance of digital switches by using OCTO SOI MOSFET(2015) De Souza Fino L.N.; Davini Neto E.; Da Silveira M.A.G.; Renaux C.; Flandre D.; Gimenez S.P.© 2015 IOP Publishing Ltd.This paper performs an experimental comparative study of the total ionizing dose effects due to the x-ray radiation between the silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) manufactured with octagonal gate geometry and the standard counterpart. Our main focus is on integrated transceivers for wireless communications and smart-power dc/dc converters for mobile electronics, where the transistor is used as the key switching element. It is shown that this innovative layout can reduce the total ionizing dose (TID) effects due to the special characteristics of the OCTO SOI MOSFET bird's beak regions, where longitudinal electrical field lines in these regions are not parallel to the drain and source regions. Consequently, the parasitic MOSFETs associated with these regions are practically deactivated.
- Using the wave layout style to boost the digital ICs electrical performance in the radioactive environment(2015) Navarenho-De-Souza R.; Silveira M.A.G.; Gimenez S.P.© The Electrochemical Society.This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with the Wave ("S" gate geometry) and the standard layout (CnM) considering the Total Ionizing Dose (TID) effects and taking into account that the devices were biased during the radiation procedure to emphasize the effects. Due to the special layout characteristics and the different effects of the bird's beaks regions of the Wave MOSFET (WnM) compared to the conventional rectangular layout, this innovative layout proposal for MOSFETs is able to improve the device TID tolerance without adding cost to the Complementary MOS (CMOS) manufacturing process.
- Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs(2012) Cirne K.; Silveira M.A.G.; Santos R.B.B.; Gimenez S.P.; Barbosa M.D.L.; Tabacniks M.H.; Added N.; Medina N.H.; De Melo W.R.; Seixas Jr. L.E.; De Lima J.A.The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.
- Performance of electronic devices submitted to X-rays and high energy proton beams(2012) Silveira M.A.G.; Cirne K.H.; Santos R.B.B.; Gimenez S.P.; Medina N.H.; Added N.; Tabacniks M.H.; Barbosa M.D.L.; Seixas L.E.; Melo W.; De Lima J.A.In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. © 2011 Elsevier B.V. All rights reserved.