Departamento de Física
URI permanente desta comunidadehttps://repositorio.fei.edu.br/handle/FEI/785
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5 resultados
Resultados da Pesquisa
- Unsupervised machine learning application to identify single-event transients (SETs) from noise events in MOSFET transistor ionizing radiation effects(2023) ALLEGRO, P. R. P.; TOUFEN, D. L.; AGUIAR, V. A. P.; SANTOS, L. S. A.; OLIVEIRA W. N.; ADDED, N.; MEDINA, N. H.; MACCHIONE, E. L. A.; ALBERTON , S. G.; Marcilei Aparecida Guazzelli; MELO, M. A. A.; OLIVEIRA, J. A.© 2023This article presents a novel application of the k-means unsupervised machine learning algorithm to the problem of identifying single event transient (SET) events from noise during heavy-ion irradiation experiments of an electronic device. We explore the performance of the k-means algorithm by analyzing experimental datasets of SET events produced by several heavy-ions irradiations of a MOSFET transistor. Data anomalies and effectiveness of the chosen features (mean, standard deviation, skewness, and kurtosis) were investigated using the Isolation Forest and Random Forest algorithms, respectively. The results show a high capability of the K-means algorithm to identify SET events from noise using the first four statistical moments as features, allowing in the future the use of this method for in situ event detection and diagnosis without previous algorithm training or pre-analysis of the experimental data.
- X-ray-induced upsets in a Xilinx spartan 3E FPGA(2015-12-24) Marcilei Aparecida Guazzelli; Roberto Santos; LEITE, F. G. H.; ARAÚJO, N. E.; MEDINA, N. H.; PORCHER, B. C.; AGUIAR, V. A P.; ADDED, N.; VARGAS. F.© 2015 IEEE.As the use of Field Programmable Gate Arrays (FPGAs) in space and in other strategic areas increases, concerns about their tolerance to radiation also increases. This work reports the observation of soft and hard errors in a Xilinx Spartan-3E commercial off-The-shelf FPGA when exposed to low-dose rate, low energy X-rays during a dynamic test in which a LEON 3 soft-core processor was mapped in the FPGA.
- Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator(2014) Aguiar V.A.P.; Added N.; Medina N.H.; Macchione E.L.A.; Tabacniks M.H.; Aguirre F.R.; Silveira M.A.G.; Santos R.B.B.; Seixas Jr. L.E.In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation. © 2014 Elsevier B.V. All rights reserved.
- Comparative study of the proton beam effects between the conventional and Circular-Gate MOSFETs(2012) Cirne K.; Silveira M.A.G.; Santos R.B.B.; Gimenez S.P.; Barbosa M.D.L.; Tabacniks M.H.; Added N.; Medina N.H.; De Melo W.R.; Seixas Jr. L.E.; De Lima J.A.The study of ionizing radiation effects on semiconductor devices is of great relevance for the global technological development and is a necessity in some strategic areas in Brazil. This work presents preliminary results of radiation effects in MOSFETs that were exposed to 3.2 Grad radiation dose produced by a 2.6-MeV proton beam. The focus of this work was to electrically characterize a Rectangular-Gate MOSFET (RGT) and a Circular-Gate MOSFET (CGT), manufactured with the On Semiconductor 0.5 μm standard CMOS fabrication process and to verify a suitable geometry for space applications. During the experiment, I DS × V GS curves were measured. After irradiation, the RGT off-state current (I OFF) increased approximately two orders of magnitude reaching practically the same value of the I OFF in the CGT, which only doubled its value. © 2011 Elsevier B.V. All rights reserved.
- Performance of electronic devices submitted to X-rays and high energy proton beams(2012) Silveira M.A.G.; Cirne K.H.; Santos R.B.B.; Gimenez S.P.; Medina N.H.; Added N.; Tabacniks M.H.; Barbosa M.D.L.; Seixas L.E.; Melo W.; De Lima J.A.In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circuits were exposed to 10 keV X-ray radiation and 2.6 MeV energy proton beam. We have irradiated MOSFET devices with two different geometries: rectangular-gate transistor and circular-gate transistor. We have observed the cumulative dose provokes shifts on the threshold voltage and increases or decreases the transistor's off-state and leakage current. The position of the trapped charges in modern CMOS technology devices depends on radiation type, dose rate, total dose, applied bias and is a function of device geometry. We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor. © 2011 Elsevier B.V. All rights reserved.