Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1063
Title: Analysis of Temperature Induced Saturation Threshold Voltage Degradation in Deep-Submicrometer Ultrathin SOI MOSFETs
Authors: PAVANELLO, Marcelo A.
MARTINO, João Antonio
SIMOEN, Eddy
CLAEYS, Cor
Issue Date: 2005
Journal: IEEE Transactions on Electron Devices
ISSN: 0018-9383
Citation: PAVANELLO, Marcelo A.; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor. Analysis of Temperature Induced Saturation Threshold Voltage Degradation in Deep-Submicrometer Ultrathin SOI MOSFETs. IEEE Transactions on Electron Devices, v. 52, n. 10, p. 2236-2242, 2005.
Access Type: Acesso Aberto
DOI: 10.1109/TED.2005.856799
URI: https://repositorio.fei.edu.br/handle/FEI/1063
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