Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1107
Title: In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs
Authors: DORIA, RODRIGO T.
SOUZA, M. A. S.
MARTINO, João Antonio
SIMOEN, Eddy
CLAEYS, Cor
PAVANELLO, Marcelo A.
Issue Date: 2015
Journal: Microelectronic Engineering
ISSN: 0167-9317
Citation: DORIA, RODRIGO T.; SOUZA, M. A. S.; MARTINO, João Antonio; SIMOEN, Eddy; CLAEYS, Cor; PAVANELLO, Marcelo A.. In-depth low frequency noise evaluation of substrate rotation and strain engineering in n-type triple gate SOI FinFETs. Microelectronic Engineering, v. 147, p. 92-95, 2015.
Access Type: Acesso Aberto
DOI: 10.1016/j.mee.2015.04.056
URI: https://repositorio.fei.edu.br/handle/FEI/1107
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