Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1294
Title: Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
Authors: BÜHLER, R. T.
Agopian, P. G. D.
COLLAERT, N.
Simoen, E.
CLAEYS, C.
Martino, J A
Issue Date: 2015
Journal: SOLID-STATE ELECTRONICS
ISSN: 0038-1101
Citation: BÜHLER, R. T.; Agopian, P. G. D.; COLLAERT, N.; Simoen, E.; CLAEYS, C.; Martino, J A. Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs. SOLID-STATE ELECTRONICS, v. 103, p. 209-215, 2015.
Access Type: Acesso Aberto
DOI: 10.1016/j.sse.2014.07.010
URI: https://repositorio.fei.edu.br/handle/FEI/1294
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