Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/1480
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dc.contributor.authorPERIN, ANDRE L.
dc.contributor.authorPEREIRA, ARIANNE S. N.
dc.contributor.authorBUHLER, RUDOLF T.
dc.contributor.authorDA SILVEIRA, MARCILEI A. G.
dc.contributor.authorGIACOMINI, RENATO C.
dc.date.accessioned2019-08-19T23:47:20Z-
dc.date.available2019-08-19T23:47:20Z-
dc.date.issued2019
dc.identifier.citationPERIN, ANDRE L.; PEREIRA, ARIANNE S. N.; BUHLER, RUDOLF T.; DA SILVEIRA, MARCILEI A. G.; GIACOMINI, RENATO C.. SOI Stacked Transistors Tolerance to Single-Event Effects. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 1, p. 1-1, 2019.
dc.identifier.issn1530-4388
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1480-
dc.relation.ispartofIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.rightsAcesso Aberto
dc.titleSOI Stacked Transistors Tolerance to Single-Event Effectspt_BR
dc.typeArtigopt_BR
dc.identifier.doi10.1109/tdmr.2019.2912862
dc.description.volume1
dc.description.firstpage1
dc.description.lastpage1
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