Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3238
Title: Thermal neutron induced upsets in 28nm SRAM
Authors: AGUIAR, V. A. P.
MEDINA, N. H.
ADDED, N.
MACCHIONE, E. L. A.
ALBERTON, S. G.
RODRIGUES, C. L.
SILVA, T. F.
ZAHN, G. S.
GENEZINI, F. A.
MORALLES, M.
BENEVENUTI, F.
GUAZZELLI, Marcilei Aparecida
Issue Date: 2019
Abstract: In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.
Journal: JOURNAL OF PHYSICS. CONFERENCE SERIES
ISSN: 1742-6588
Citation: AGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, M. A. ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019.
Access Type: Aberto
DOI: 10.1088/1742-6596/1291/1/012025
URI: https://repositorio.fei.edu.br/handle/FEI/3238
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