Please use this identifier to cite or link to this item:
|Title:||Thermal neutron induced upsets in 28nm SRAM|
|Authors:||AGUIAR, V. A. P.|
MEDINA, N. H.
MACCHIONE, E. L. A.
ALBERTON, S. G.
RODRIGUES, C. L.
SILVA, T. F.
ZAHN, G. S.
GENEZINI, F. A.
GUAZZELLI, Marcilei Aparecida
|Abstract:||In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.|
|Journal:||JOURNAL OF PHYSICS. CONFERENCE SERIES|
|Citation:||AGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, Marcilei Aparecida ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019.|
|Appears in Collections:||Artigos|
Files in This Item:
|Guazzelli_2019.pdf||Guazzelli_Artigo||2.95 MB||Adobe PDF|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.