Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3242
Title: Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs
Authors: ALBERTON, S G
MEDINA, N H
ADDED, N
AGUIAR, V A P
MENEGASSO, R
MACCHIONE, E L A
GUAZZELLI, Marcilei Aparecida
Issue Date: 2019
Abstract: MOSFETs are subject to di erent types of Single-Event E ects (SEEs) induced by heavy ions, with low-voltage MOSFETs being more susceptible to non-destructive e ects, such as Single-Event Transients, than high-voltage MOSFETs which may also be susceptible to destructive e ects. In this paper an experimental setup used to study SEEs in power MOSFETs at the S~ao Paulo 8UD Pelletron accelerator and computational simulations for SEE cross section calculations in low-voltage MOSFETs are presented.
Journal: JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT)
ISSN: 1742-6588
Citation: ALBERTON, S. G.; MEDINA, N. H.; ADDED, N.; AGUIAR, V. A. P; MENEGASSO, R.; MACCHIONE, E. L. A.; SILVEIRA, M. A. G. Single-event effects: experimental setup for power MOSFETs and diffusion model for cross section calculations in low-voltage MOSFETs. JOURNAL OF PHYSICS. CONFERENCE SERIES (PRINT), v. 1291, p. 012045, 2019.
Access Type: Acesso Aberto
DOI: 10.1088/1742-6596/1291/1/012045
URI: https://repositorio.fei.edu.br/handle/FEI/3242
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