Please use this identifier to cite or link to this item: https://repositorio.fei.edu.br/handle/FEI/3495
Title: Using the Octagonal Layout Style for MOSFETs to boost the Device Matching in Ionizing Radiation Environments
Authors: PERUZZI , VINICIUS VONO
CRUZ, WILLIAM
SILVA, GABRIEL AUGUSTO DA
SIMOEN, EDDY
CLAEYS, COR
Salvador Gimenez
Issue Date: 4-Dec-2020
Abstract: This article describes an experimental comparative study of the matching between the Octo conventional (octagonal gate geometry) and Conventional (rectangular gate shape) n-channel Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFETs), which were manufactured in an 130 nm Silicon-Germanium Bulk Complementary MOS (CMOS) Integrated Circuits (ICs) technology and exposed to different X-rays Total Ionizing Doses (TIDs), under the on-state bias conditions. The results indicate that the Octo layout style with alpha (α) angle equal to 90° and a cut factor of 50% for MOSFETs is capable of boosting the device matching by at least 56.1%, on average, regarding the electrical parameters studied (Threshold Voltage and Subthreshold Swing), as compared to those found in the Conventional MOSFET counterparts, considering that they present the same bias conditions and regarding different TIDs. This happens due to the Longitudinal Corner Effect (LCE), Parallel MOSFETs with Different Channel Length Effect (PAMDLE) and Deactivation of Parasitic MOSFETs in the Bird's Beak Regions Effect (DEPAMBBRE) which are present in the Octo MOSFETs. Therefore, the Octagonal layout style can be considered as an alternative hardness-by-design (HBD) layout strategy to boost the electrical performance and TID tolerance of MOSFETs enabling analog or radio-frequency CMOS ICs applications.
Keywords: Octo layout style
hardness-by-design technique
MOSFET matching, analog CMOS ICs
Total ionizing dose
Experimental electrical characterization
Journal: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Citation: PERUZZI , V. V.; CRUZ, W.; SILVA, G. A.; SIMOEN, E.; CLAEYS, C.; SALVADOR, G. Using the octagonal layout Style for MOSFETs to boost the device matching in Ionizing radiation environments. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v. 20, n. 4, p. 1-6, 2020.
Access Type: Acesso Restrito
DOI: 10.1109/TDMR.2020.3033517
Appears in Collections:Artigos

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.