Non-linear behavior of Junctionless nanowire transistors operating in the linear regime
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2013-09-06
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Rodrido Doria
TREVISOLI, R. D.
Michelly De Souza
ESTRADA, M.
CERDEIRA, A.
Marcelo Antonio Pavanello
TREVISOLI, R. D.
Michelly De Souza
ESTRADA, M.
CERDEIRA, A.
Marcelo Antonio Pavanello
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Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
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DORIA, R.; TREVISOLI, R. D.; DE SOUZA, M.; ESTRADA, M.; CERDEIRA, A.; PAVANELLO, M. A. Non-linear behavior of Junctionless nanowire transistors operating in the linear regime. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
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The linearity of Junctionless nanowire transistors operating in the linear regime has been evaluated through experimental data and numerical simulations. The influences of the fin width, the gate bias, the temperature and the series resistance on the overall linearity have been evaluated. It is demonstrated that the increase of the series resistance improves the second order distortion and degrades the third order one. © 2013 IEEE.