Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology
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8
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2006-09-01
Autores
Salvador Gimenez
FERREIRA, R. M. G.
Joao Antonio Martino
FERREIRA, R. M. G.
Joao Antonio Martino
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ECS Transactions
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GIMENEZ, S.; FERREIRA, R. M. G.; MARTINO. J. A. Early voltage behavior in circular gate SOI nMOSFET using 0.13 μm partially-depleted SOI CMOS technology. ECS Transactions, v. 4, n. 1, p. 309-318, sept. 2006.
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This paper studies the Early voltage behavior in circular gate partially-depleted SOI nMOSFET. The drain/source asymmetric effects are considered in terms of drain current as a function of the gate and drain voltages. Drain current comparisons with rectangular gate partially-depleted SOI nMOSFET are performed, regarding the same effective channel length and width. Experimental results and three-dimensional simulations are used to qualify the results. © 2006 The Electrochemical Society.