Simple method to determine the poly gate doping concentration based on poly depletion effect
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2005-09-07
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RODRIGUES, M.
SONNENBERG, V.
MARTINO, J. A.
SONNENBERG, V.
MARTINO, J. A.
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Proceedings - Electrochemical Society
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RODRIGUES, M.; SONNENBERG, V.; MARTINO, J. A. Simple method to determine the poly gate doping concentration based on poly depletion effect. Proceedings - Electrochemical Society, v. PV 2005-08, p. 180-187, sept. 2005.
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This work presents an analysis of the Capacitance vs. Voltage curve in MOS Capacitor taking into account the poly gate depletion effect in deep submicrometer CMOS technology. This effect is observed in capacitors with poly gate material with low doping concentration near of poly gate/oxide interface. By bidimensional numerical simulations, C-V curves were performed for this analysis and a simple method to determine the poly gate doping concentration is proposed. Experimental results are also presented obtaining coherent values.