Physical Characterization of TiOx layers deposited from sol-gel technique
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2013-09-06
Autores
MENESES, C.
SANCHEZ, J.
ESTRADA. M.
PEREYRA, I.
AVILA-GARCIA, A.
ESCOBOSA, A.
Marcelo Antonio Pavanello
SANCHEZ, J.
ESTRADA. M.
PEREYRA, I.
AVILA-GARCIA, A.
ESCOBOSA, A.
Marcelo Antonio Pavanello
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Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
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MENESES, C.; SANCHEZ, J.; ESTRADA. M.; PEREYRA, I.;AVILA-GARCIA, A.; ESCOBOSA, A.; PAVANELLO, M. A. Physical Characterization of TiOx layers deposited from sol-gel technique. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
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Titanium Oxide (TiOx) is a material that can be used as optical spacer and injection/transport layer in organic devices as OLEDs and OPDs, as well as a high relative dielectric constant, (high-k), dielectric for organic thin film transistors, (OTFTs). For this last application, a low temperature and low cost deposition method of these layers using a sol-gel technique can be more adequate. Therefore, in this paper we present the physical characterization of TiOx layers deposited from a sol-gel technique, which includes the refraction index and layer thickness determination by ellipsometry, as well as XRD and FTIR spectroscopy to determine the structure and composition of the deposited layer, respectively. In addition, we compare differences in the characteristics observed in TiOx prepared by the sol-gel technique with those fabricated by reactive sputtering. © 2013 IEEE.