Physical Characterization of TiOx layers deposited from sol-gel technique

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dc.contributor.authorMENESES, C.
dc.contributor.authorSANCHEZ, J.
dc.contributor.authorESTRADA. M.
dc.contributor.authorPEREYRA, I.
dc.contributor.authorAVILA-GARCIA, A.
dc.contributor.authorESCOBOSA, A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:01:56Z
dc.date.available2022-01-12T22:01:56Z
dc.date.issued2013-09-06
dc.description.abstractTitanium Oxide (TiOx) is a material that can be used as optical spacer and injection/transport layer in organic devices as OLEDs and OPDs, as well as a high relative dielectric constant, (high-k), dielectric for organic thin film transistors, (OTFTs). For this last application, a low temperature and low cost deposition method of these layers using a sol-gel technique can be more adequate. Therefore, in this paper we present the physical characterization of TiOx layers deposited from a sol-gel technique, which includes the refraction index and layer thickness determination by ellipsometry, as well as XRD and FTIR spectroscopy to determine the structure and composition of the deposited layer, respectively. In addition, we compare differences in the characteristics observed in TiOx prepared by the sol-gel technique with those fabricated by reactive sputtering. © 2013 IEEE.
dc.identifier.citationMENESES, C.; SANCHEZ, J.; ESTRADA. M.; PEREYRA, I.;AVILA-GARCIA, A.; ESCOBOSA, A.; PAVANELLO, M. A. Physical Characterization of TiOx layers deposited from sol-gel technique. Chip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices, Sept. 2013.
dc.identifier.doi10.1109/SBMicro.2013.6676158
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4101
dc.relation.ispartofChip in Curitiba 2013 - SBMicro 2013: 28th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageFTIR spectroscopy
dc.subject.otherlanguageTiOx
dc.subject.otherlanguageX-ray spectroscopy
dc.titlePhysical Characterization of TiOx layers deposited from sol-gel technique
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-84893431979
fei.scopus.subjectDeposition methods
fei.scopus.subjectFTIR spectroscopy
fei.scopus.subjectLow temperatures
fei.scopus.subjectOrganic thin film transistors
fei.scopus.subjectPhysical characterization
fei.scopus.subjectRelative dielectric constant
fei.scopus.subjectSol-gel technique
fei.scopus.subjectTiOx
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84893431979&origin=inward
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