Standard MOS Diodes Composed by SOI UTBB Transistors

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dc.contributor.authorCOSTA, F. J.
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorCAPOVILLA, C. E.
dc.contributor.authorRodrigo Doria
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-11-01T06:04:19Z
dc.date.available2022-11-01T06:04:19Z
dc.date.issued2022-08-05
dc.description.abstract© 2022 IEEE.The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at -2 V and with a P-type GP implemented. However, both conditions result in increased threshold voltage.
dc.identifier.citationCOSTA, F. J.; TREVISOLI, R.; CAPOVILLA, C. E.; DORIA, R. Standard MOS Diodes Composed by SOI UTBB Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
dc.identifier.doi10.1109/SBMICRO55822.2022.9881028
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4624
dc.relation.ispartof36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
dc.rightsAcesso Restrito
dc.subject.otherlanguageSOI
dc.subject.otherlanguageUltra-Low-Power Diodes
dc.subject.otherlanguageUTBB
dc.titleStandard MOS Diodes Composed by SOI UTBB Transistors
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85139251000
fei.scopus.subjectGround planes
fei.scopus.subjectMOS diode
fei.scopus.subjectOn state current
fei.scopus.subjectPerformance
fei.scopus.subjectSOI
fei.scopus.subjectSOI transistors
fei.scopus.subjectSubstrate bias
fei.scopus.subjectUltra-low power
fei.scopus.subjectUltra-low-power diode
fei.scopus.subjectUTBB
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85139251000&origin=inward
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