Standard MOS Diodes Composed by SOI UTBB Transistors
N/D
Tipo de produção
Artigo de evento
Data de publicação
2022-08-05
Texto completo (DOI)
Periódico
36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
COSTA, F. J.
TREVISOLI, R.
CAPOVILLA, C. E.
Rodrigo Doria
Orientadores
Resumo
© 2022 IEEE.The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at -2 V and with a P-type GP implemented. However, both conditions result in increased threshold voltage.
Citação
COSTA, F. J.; TREVISOLI, R.; CAPOVILLA, C. E.; DORIA, R. Standard MOS Diodes Composed by SOI UTBB Transistors. 36th Symposium on Microelectronics Technology, SBMICRO 2022 - Proceedings, aug. 2022.
Palavras-chave
Keywords
SOI; Ultra-Low-Power Diodes; UTBB
Assuntos Scopus
Ground planes; MOS diode; On state current; Performance; SOI; SOI transistors; Substrate bias; Ultra-low power; Ultra-low-power diode; UTBB