Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices
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2015-05-24
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MARINIELLO, G.
Marcelo Antonio Pavanello
Marcelo Antonio Pavanello
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ECS Transactions
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MARINIELLO, G.; PAVANELLO, M. A. Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices. ECS Transactions. v, 66, n, 1, p. 259-266, Mayo, 2015.
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This paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different materials, Silicon and Silicon Carbide, is also studied. The results show lower impact in JNT compared to FinFETs. Also, the self-heating is lower in silicon devices then silicon carbide.