Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices

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dc.contributor.authorMARINIELLO, G.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T22:00:16Z
dc.date.available2022-01-12T22:00:16Z
dc.date.issued2015-05-24
dc.description.abstractThis paper aims at comparing the self-heating effects influence between FinFETs and Junctionless Nanowire Transistors (JNT) based on three-dimensional numerical simulations. The self-heating of JNT made with different materials, Silicon and Silicon Carbide, is also studied. The results show lower impact in JNT compared to FinFETs. Also, the self-heating is lower in silicon devices then silicon carbide.
dc.description.firstpage259
dc.description.issuenumber1
dc.description.lastpage266
dc.description.volume66
dc.identifier.citationMARINIELLO, G.; PAVANELLO, M. A. Simulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices. ECS Transactions. v, 66, n, 1, p. 259-266, Mayo, 2015.
dc.identifier.doi10.1149/06601.0259ecst
dc.identifier.issn1938-6737
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3988
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSimulation comparison of self-heating effects in Junctionless Nanowire Transistos and FinFET devices
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84931405667
fei.scopus.subjectFinFET devices
fei.scopus.subjectFinFETs
fei.scopus.subjectJunctionless nanowire transistors (JNT)
fei.scopus.subjectSelf-heating
fei.scopus.subjectSelf-heating effect
fei.scopus.subjectSilicon devices
fei.scopus.subjectSimulation comparison
fei.scopus.subjectThree-dimensional numerical simulations
fei.scopus.updated2024-10-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84931405667&origin=inward
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