Study of matching properties of graded-channel SOI MOSFETs

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dc.contributor.authorMichelly De Souza
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2023-08-26T23:50:11Z
dc.date.available2023-08-26T23:50:11Z
dc.date.issued2008-01-05
dc.description.abstractIn this paper an overall analysis on the matching properties of Graded-Channel (GC) SOI MOSFETs in comparison to conventional SOI transistors is performed. Experimental results show that GC devices present poorer matching behavior in comparison to conventional SOI counterpart for equal mask channel length, whereas for same effective channel length, almost the same matching behavior. The analytical model for the drain current of GC devices is used to investigate the reasons for this matching worsening. Two-dimensional numerical simulations are used to validate the model-based analysis both in linear and saturation regions.
dc.description.firstpage69
dc.description.issuenumber2
dc.description.lastpage75
dc.description.volume3
dc.identifier.citationDE SOUZA, M.; FLANDRE, D.; PAVANELLO, M. A. Study of matching properties of graded-channel SOI MOSFETs. Journal of Integrated Circuits and Systems, v. 3, n. 2, p. 69-75, 2008.
dc.identifier.issn1807-1953
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/5020
dc.relation.ispartofJournal of Integrated Circuits and Systems
dc.rightsAcesso Restrito
dc.subject.otherlanguageCharge-based model
dc.subject.otherlanguageGraded-channel
dc.subject.otherlanguageMismatch
dc.subject.otherlanguageMOSFET
dc.subject.otherlanguageSilicon-on-insulator
dc.titleStudy of matching properties of graded-channel SOI MOSFETs
dc.typeArtigo
fei.scopus.citations8
fei.scopus.eid2-s2.0-56849099337
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=56849099337&origin=inward
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