Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor

Nenhuma Miniatura disponível
Citações na Scopus
13
Tipo de produção
Artigo de evento
Data
2011-10-05
Autores
ZILIOTTO, A. P. B.
BELLODI, M.
Orientador
Periódico
ECS Transactions
Título da Revista
ISSN da Revista
Título de Volume
Citação
ZILIOTTO, A. P. B.; BELLODI, M. Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor. ECS Transactions, v. 41, n. 6, p. 163-173, 2011.
Texto completo (DOI)
Palavras-chave
Resumo
It is presented numerical bi-dimensional simulations results concerning the high frequency capacitance versus voltage (C-V) characteristic of the MOS capacitor operating from room temperature up to 573K using AC analysis. The results show that the C-V curves behavior is influenced by substrate doping concentration, substrate and gate materials. Also, it is presented experimental results concerning to the high frequency C-V characteristic of a sample MOS capacitor, confirming the results obtained through simulations. ©The Electrochemical Society.

Coleções