Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor

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2011-10-05
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ZILIOTTO, A. P. B.
BELLODI, M.
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ECS Transactions
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ZILIOTTO, A. P. B.; BELLODI, M. Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor. ECS Transactions, v. 41, n. 6, p. 163-173, 2011.
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It is presented numerical bi-dimensional simulations results concerning the high frequency capacitance versus voltage (C-V) characteristic of the MOS capacitor operating from room temperature up to 573K using AC analysis. The results show that the C-V curves behavior is influenced by substrate doping concentration, substrate and gate materials. Also, it is presented experimental results concerning to the high frequency C-V characteristic of a sample MOS capacitor, confirming the results obtained through simulations. ©The Electrochemical Society.

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