Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor

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dc.contributor.authorZILIOTTO, A. P. B.
dc.contributor.authorBELLODI, M.
dc.date.accessioned2022-01-12T22:03:09Z
dc.date.available2022-01-12T22:03:09Z
dc.date.issued2011-10-05
dc.description.abstractIt is presented numerical bi-dimensional simulations results concerning the high frequency capacitance versus voltage (C-V) characteristic of the MOS capacitor operating from room temperature up to 573K using AC analysis. The results show that the C-V curves behavior is influenced by substrate doping concentration, substrate and gate materials. Also, it is presented experimental results concerning to the high frequency C-V characteristic of a sample MOS capacitor, confirming the results obtained through simulations. ©The Electrochemical Society.
dc.description.firstpage163
dc.description.issuenumber6
dc.description.lastpage173
dc.description.volume41
dc.identifier.citationZILIOTTO, A. P. B.; BELLODI, M. Evaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor. ECS Transactions, v. 41, n. 6, p. 163-173, 2011.
dc.identifier.doi10.1149/1.3629964
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4184
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleEvaluation of the high temperatures influence on high frequency C-V curves of MOS capacitor
dc.typeArtigo de evento
fei.scopus.citations14
fei.scopus.eid2-s2.0-84857299173
fei.scopus.subjectAC analysis
fei.scopus.subjectC-V characteristic
fei.scopus.subjectC-V curve
fei.scopus.subjectGate materials
fei.scopus.subjectHigh frequency
fei.scopus.subjectHigh frequency capacitance
fei.scopus.subjectHigh temperature
fei.scopus.subjectRoom temperature
fei.scopus.subjectSubstrate doping
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84857299173&origin=inward
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