Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range

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dc.contributor.authorMichelly De Souza
dc.contributor.authorEMAM, M.
dc.contributor.authorVANHOENACKER-JANVIER, D.
dc.contributor.authorRASKIN, J. P.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.date.accessioned2022-01-12T22:03:41Z
dc.date.available2022-01-12T22:03:41Z
dc.date.issued201-10-14
dc.identifier.citationDE SOUZA, M.; EMAM, M.; VANHOENACKER-JANVIER, D.; RASKIN, J. P.; FLANDRE, D.; PAVANELLO, M. A. Comparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range. Proceedings - IEEE International SOI Conference. Oct. 2010.
dc.identifier.doi10.1109/SOI.2010.5641388
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4220
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleComparison between the behavior of submicron Graded-Channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-78650560535
fei.scopus.updated2024-05-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78650560535&origin=inward
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