Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications

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dc.contributor.authorPavanello M.A.
dc.contributor.authorDer Agopian P.G.
dc.contributor.authorMartino J.A.
dc.contributor.authorFlandre D.
dc.date.accessioned2019-08-19T23:45:08Z
dc.date.available2019-08-19T23:45:08Z
dc.date.issued2006
dc.description.abstractWe present in this work an analysis of the low temperature operation of Graded-Channel fully depleted Silicon-On-Insulator (SOI) nMOSFETs for analog applications, in the range of 100-300 K. This analysis is supported by a comparison between the results obtained by two-dimensional numerical simulations and measurements in the whole temperature range under study. The Graded-Channel transistor presents higher Early voltage if compared to the conventional fully depleted SOI nMOSFET, without degrading the transconductance over drain current, at all studied temperatures, leading to a gain larger than 20 dB compared to the conventional SOI. The resulting higher gain lies in the improvement of the electric field distribution and impact ionization rate by the graded-channel structure. © 2005 Elsevier Ltd. All reserved.
dc.description.firstpage137
dc.description.issuenumber2
dc.description.lastpage144
dc.description.volume37
dc.identifier.citationPAVANELLO, Marcelo A.; AGOPIAN, Paula Ghedini Der; MARTINO, João Antonio; FLANDRE, Denis. Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. Microelectronics Journal, v. 37, n. 2, p. 137-144, 2006.
dc.identifier.doi10.1016/j.mejo.2005.04.046
dc.identifier.issn0026-2692
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1060
dc.relation.ispartofMicroelectronics Journal
dc.rightsAcesso Restrito
dc.subject.otherlanguageAnalog circuits
dc.subject.otherlanguageChannel engineering
dc.subject.otherlanguageGraded-channel
dc.subject.otherlanguageLow temperature
dc.subject.otherlanguageSilicon-on-insulator
dc.titleCryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications
dc.typeArtigo
fei.scopus.citations5
fei.scopus.eid2-s2.0-28644451118
fei.scopus.subjectAnalog circuits
fei.scopus.subjectChannel engineering
fei.scopus.subjectGraded-channels
fei.scopus.subjectLow temperature
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=28644451118&origin=inward
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