Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications
N/D
Tipo de produção
Artigo de evento
Data de publicação
2013-09-27
Texto completo (DOI)
Periódico
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Editor
Texto completo na Scopus
Citações na Scopus
3
Autores
DE SOUZA, R. N.
Marcilei Aparecida Guazzelli
Salvador Gimenez
Orientadores
Resumo
© 2013 IEEE.This paper performs an experimental comparative study of the X-ray radiation effects between the Wave layout style (S-shaped gate geometry) and the Conventional (rectangular gate geometry) counterpart, focusing on the digital integrated circuits (IC) applications. Wave layout style demonstrates to be more tolerant regarding the total ionizing radiation (TID) effects for digital IC. By working with Wave layout style instead of the Conventional counterpart, it can significantly improve the device performance in terms of the threshold voltage (VTH), subthreshold slope (S), the on-state drain current (ION), the off-state drain current (IOFF), the ION/IOFF ratio, and the on- state drain to source series resistance (RON) and consequently the digital IC operating in radioactive environment.
Citação
DE SOUZA, R. N.; GUAZZELLI, M. A.; GIMENEZ, S. Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECSS, Sept. 2013.
Palavras-chave
Keywords
radiation robustness; radiation tolerance; TID; total ionizing dose; Wave layout style; X-ray radiation
Assuntos Scopus
Comparative studies; Radiation tolerances; Radioactive environment; Series resistances; TID; Total Ionizing Dose; Total ionizing dose radiation; X ray radiation