Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications

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dc.contributor.authorDE SOUZA, R. N.
dc.contributor.authorMarcilei Aparecida Guazzelli
dc.contributor.authorSalvador Gimenez
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-7110-7241
dc.contributor.authorOrcidhttps://orcid.org/0000-0002-3616-9559
dc.date.accessioned2022-01-12T22:01:19Z
dc.date.available2022-01-12T22:01:19Z
dc.date.issued2013-09-27
dc.description.abstract© 2013 IEEE.This paper performs an experimental comparative study of the X-ray radiation effects between the Wave layout style (S-shaped gate geometry) and the Conventional (rectangular gate geometry) counterpart, focusing on the digital integrated circuits (IC) applications. Wave layout style demonstrates to be more tolerant regarding the total ionizing radiation (TID) effects for digital IC. By working with Wave layout style instead of the Conventional counterpart, it can significantly improve the device performance in terms of the threshold voltage (VTH), subthreshold slope (S), the on-state drain current (ION), the off-state drain current (IOFF), the ION/IOFF ratio, and the on- state drain to source series resistance (RON) and consequently the digital IC operating in radioactive environment.
dc.identifier.citationDE SOUZA, R. N.; GUAZZELLI, M. A.; GIMENEZ, S. Total ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECSS, Sept. 2013.
dc.identifier.doi10.1109/RADECS.2013.6937374
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4059
dc.relation.ispartofProceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
dc.rightsAcesso Restrito
dc.subject.otherlanguageradiation robustness
dc.subject.otherlanguageradiation tolerance
dc.subject.otherlanguageTID
dc.subject.otherlanguagetotal ionizing dose
dc.subject.otherlanguageWave layout style
dc.subject.otherlanguageX-ray radiation
dc.titleTotal ionizing dose radiation effects between the Wave layout style and its conventional counterpart focusing on the digital IC applications
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84949925078
fei.scopus.subjectComparative studies
fei.scopus.subjectRadiation tolerances
fei.scopus.subjectRadioactive environment
fei.scopus.subjectSeries resistances
fei.scopus.subjectTID
fei.scopus.subjectTotal Ionizing Dose
fei.scopus.subjectTotal ionizing dose radiation
fei.scopus.subjectX ray radiation
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84949925078&origin=inward
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