Strain effectiveness dependence on fin dimensions and shape for n-type triple-gate MuGFETs

Abstract

We analyze in this work, for the first time, the effectiveness and the dependence of the induced uniaxial stress on process variables, using the CESL technique on n-type MuGFETs thought 3D simulations. The fin cross-section shape variation is also included with a complete study on the stress distribution and the electric characterization of the device to measure the impact on its performance. The stress distribution and the device performance exhibited dependence with the shape and fin dimensions, with longer and taller inverse trapezium fin possessing better stress and DC characteristics, and better AC performance on the regular trapezium. ©The Electrochemical Society.