Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs

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dc.contributor.authorSEIXAS, LUIS E.
dc.contributor.authorGONCALVEZ, O. L.
dc.contributor.authorVAZ, R. G.
dc.contributor.authorTELLES, A. C. C.
dc.contributor.authorFINCO, S.
dc.contributor.authorGIMENEZ, S. P.
dc.date.accessioned2019-08-19T23:45:29Z
dc.date.available2019-08-19T23:45:29Z
dc.date.issued2019
dc.description.firstpage1
dc.description.issuenumber1
dc.description.lastpage13
dc.description.volume1
dc.identifier.citationSEIXAS, LUIS E.; GONCALVEZ, O. L.; VAZ, R. G.; TELLES, A. C. C.; FINCO, S.; GIMENEZ, S. P.. Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs. Journal of Materials Science: Materials in Electronics, v. 1, n. 1, p. 1-13, 2019.
dc.identifier.doi10.1007/s10854-019-00747-w
dc.identifier.issn1573-482X
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1316
dc.relation.ispartofJournal of Materials Science: Materials in Electronics
dc.rightsAcesso Aberto
dc.titleMinimizing the TID effects due to gamma rays by using diamond layout for MOSFETspt_BR
dc.typeArtigopt_BR
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