Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation
Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2012-03-17
Autores
DE SAOUZA, M. A. S.
CLAEYS, C.
Rodrido Doria
Marcelo Antonio Pavanello
SIMOEN, E.
CLAEYS, C.
Rodrido Doria
Marcelo Antonio Pavanello
SIMOEN, E.
Orientador
Periódico
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Título da Revista
ISSN da Revista
Título de Volume
Citação
DE SAOUZA, M. A. S.; CLAEYS, C.; DORIA, R.; PAVANELLO, M. A.; SIMOEN, E. Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation, March, 2012.
Texto completo (DOI)
Palavras-chave
Resumo
This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.