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Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation

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Tipo de produção

Artigo de evento

Data de publicação

2012-03-17

Texto completo (DOI)

Periódico

2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

Editor

Citações na Scopus

0

Autores

DE SAOUZA, M. A. S.
CLAEYS, C.
Rodrido Doria
Marcelo Antonio Pavanello
SIMOEN, E.

Orientadores

Resumo

This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.

Citação

DE SAOUZA, M. A. S.; CLAEYS, C.; DORIA, R.; PAVANELLO, M. A.; SIMOEN, E. Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation, March, 2012.

Palavras-chave

Keywords

Low frequency noise; Planar SOI; SCESL; Uniaxial mechanical stress

Assuntos Scopus

Channel length; Low-Frequency Noise; Mechanical stress; Planar SOI; SCESL; SOI n-MOSFETs; SOI transistors; Uni-axial mechanical stress

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