Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation
N/D
Tipo de produção
Artigo de evento
Data de publicação
2012-03-17
Texto completo (DOI)
Periódico
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012
Editor
Texto completo na Scopus
Citações na Scopus
0
Autores
DE SAOUZA, M. A. S.
CLAEYS, C.
Rodrido Doria
Marcelo Antonio Pavanello
SIMOEN, E.
Orientadores
Resumo
This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths. © 2012 IEEE.
Citação
DE SAOUZA, M. A. S.; CLAEYS, C.; DORIA, R.; PAVANELLO, M. A.; SIMOEN, E. Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation, March, 2012.
Palavras-chave
Keywords
Low frequency noise; Planar SOI; SCESL; Uniaxial mechanical stress
Assuntos Scopus
Channel length; Low-Frequency Noise; Mechanical stress; Planar SOI; SCESL; SOI n-MOSFETs; SOI transistors; Uni-axial mechanical stress