Detailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain

Abstract

This paper studies the transport parameters of n-type FinFETs extracted using the Y-Function methodology, by comparing their dependence on the fin width and the crystallographic orientation for standard and rotated substrates as well as the influence of biaxial strain. The Y-Function has been applied with a recursive algorithm to improve its accuracy. The results obtained show that the low-field mobility increases, for devices with narrow fin, just with the rotation of the substrate. With biaxial strain the mobility increases about 50% for the standard devices and about 30% for the rotated devices compared to non-strained devices. The mobility degradation is also extracted and evaluated showing strong coulomb scattering and surface roughness scattering, where the later is higher on standard and strained devices than on only rotated devices.