Detailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain

Página do item simplificado
dc.contributor.authorRIBEIRO, T. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:59:47Z
dc.date.available2022-01-12T21:59:47Z
dc.date.issued2015-10-13
dc.description.abstractThis paper studies the transport parameters of n-type FinFETs extracted using the Y-Function methodology, by comparing their dependence on the fin width and the crystallographic orientation for standard and rotated substrates as well as the influence of biaxial strain. The Y-Function has been applied with a recursive algorithm to improve its accuracy. The results obtained show that the low-field mobility increases, for devices with narrow fin, just with the rotation of the substrate. With biaxial strain the mobility increases about 50% for the standard devices and about 30% for the rotated devices compared to non-strained devices. The mobility degradation is also extracted and evaluated showing strong coulomb scattering and surface roughness scattering, where the later is higher on standard and strained devices than on only rotated devices.
dc.identifier.citationRIBEIRO, T. A.; SIMOEN, E.; CLAEYS, C.; MARTINO, J. A.; PAVANELLO, M. A. Detailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain. SBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices, Oct, 2015.
dc.identifier.doi10.1109/SBMicro.2015.7298145
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3955
dc.relation.ispartofSBMicro 2015 - 30th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageBiaxial Strain
dc.subject.otherlanguageFinFETs
dc.subject.otherlanguageLow-Field Mobility
dc.subject.otherlanguageRotated Substrate
dc.subject.otherlanguageY-Function
dc.titleDetailed analysis of transport properties of FinFETs through Y-Function method: Effects of substrate orientation and strain
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-84961773784
fei.scopus.subjectBiaxial strains
fei.scopus.subjectCrystallographic orientations
fei.scopus.subjectFinFETs
fei.scopus.subjectLow field mobility
fei.scopus.subjectMobility degradation
fei.scopus.subjectRecursive algorithms
fei.scopus.subjectSubstrate orientation
fei.scopus.subjectSurface roughness scattering
fei.scopus.updated2024-08-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84961773784&origin=inward
Arquivos
Coleções
Artigos