Global and/or local strain influence on p- and nMuGFET analog performance

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dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:03:25Z
dc.date.available2022-01-12T22:03:25Z
dc.date.issued2011-01-05
dc.description.abstractIn this work, the analog performance is evaluated for tri-gate p-and nMuGFETs processed with and without the implementation of different global or local strain engineering techniques. For n-channel devices, the intrinsic voltage gain showed to be worse for strained devices when the fin is narrow. Only for wider fins the voltage gain increases with the strain efficiency due to mobility enhancement. Besides the voltage gain, the transconductance, output conductance and Early Voltage are also evaluated. In spite of the smaller impact of strain engineering, pMuGFETs show better analog behavior for all studied parameters. ©The Electrochemical Society.
dc.description.firstpage145
dc.description.issuenumber5
dc.description.lastpage150
dc.description.volume35
dc.identifier.citationAGOPIAN, P. G. D.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Global and/or local strain influence on p- and nMuGFET analog performance. ECS Transactions, v. 35, n. 5, p. 145-150, 2011.
dc.identifier.doi10.1149/1.3570789
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4203
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleGlobal and/or local strain influence on p- and nMuGFET analog performance
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-79960849775
fei.scopus.subjectAnalog behavior
fei.scopus.subjectAnalog performance
fei.scopus.subjectEarly voltage
fei.scopus.subjectLocal strains
fei.scopus.subjectMobility enhancement
fei.scopus.subjectN-channel devices
fei.scopus.subjectOutput conductance
fei.scopus.subjectStrain engineering
fei.scopus.subjectTrigate
fei.scopus.subjectVoltage gain
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960849775&origin=inward
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