Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K

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dc.contributor.authorTREVISOLI, R.
dc.contributor.authorMichelly De Souza
dc.contributor.authorRodrido Doria
dc.contributor.authorKILCHTYSKA, V.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:00:30Z
dc.date.available2022-01-12T22:00:30Z
dc.date.issued2014-10-29
dc.description.abstractThe aim of this work is to analyze the operation of Junctionless Nanowire Transistors at liquid helium temperature, focusing the operation at linear regime. The drain current, the transconductance, the low field mobility, subthreshold slope, the interface trap density and the channel resistance are the key parameters under analysis.
dc.identifier.citationTREVISOLI, R.; DE SOUZA, M.; DORIA, R.; KILCHTYSKA, V.; FLANDRE, D.; PAVANELLO, M. A. Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Oct. 2014.
dc.identifier.doi10.1109/SBMicro.2014.6940134
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4004
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
dc.rightsAcesso Restrito
dc.subject.otherlanguageJunctionless Transistors
dc.subject.otherlanguageLiquid Helium Temperature
dc.subject.otherlanguageLow Field Mobility
dc.titleEffect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K
dc.typeArtigo de evento
fei.scopus.citations6
fei.scopus.eid2-s2.0-84912088189
fei.scopus.subjectChannel resistance
fei.scopus.subjectElectrical parameter
fei.scopus.subjectInterface trap density
fei.scopus.subjectJunctionless transistors
fei.scopus.subjectLiquid helium temperature
fei.scopus.subjectLow field mobility
fei.scopus.subjectNanowire transistors
fei.scopus.subjectSubthreshold slope
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84912088189&origin=inward
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