The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
N/D
Tipo de produção
Artigo de evento
Data de publicação
2014-09-05
Texto completo (DOI)
Periódico
2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
BORDALLO, C. C. M.
TEIXEIRA, F. F.
Marcilei Aparecida Guazzelli
MARTINO, J. A.
AGOPIAN, P. G. D.
SIMOEN, E.
CLAEYS, C.
Orientadores
Resumo
© 2014 IEEE.In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.
Citação
BORDALLO, C. C. M.; TEIXEIRA, F. F.;GUAZZELLI, M. A.; MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Sept. 2014.
Palavras-chave
Keywords
Back conduction; Dose rate effects; Multiple-Gate MOSFETs (MuGFETs); X-ray radiation
Assuntos Scopus
Dose-rate effects; Interface traps; Maximum transconductance; Multiple gate MOSFETs; Sub-threshold regions; Subthreshold slope; Threshold voltage shifts; X ray radiation