The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters
Nenhuma Miniatura disponível
Citações na Scopus
2
Tipo de produção
Artigo de evento
Data
2014-09-05
Autores
BORDALLO, C. C. M.
TEIXEIRA, F. F.
Marcilei Aparecida Guazzelli
MARTINO, J. A.
AGOPIAN, P. G. D.
SIMOEN, E.
CLAEYS, C.
TEIXEIRA, F. F.
Marcilei Aparecida Guazzelli
MARTINO, J. A.
AGOPIAN, P. G. D.
SIMOEN, E.
CLAEYS, C.
Orientador
Periódico
2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014
Título da Revista
ISSN da Revista
Título de Volume
Citação
BORDALLO, C. C. M.; TEIXEIRA, F. F.;GUAZZELLI, M. A.; MARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. The effect of X-Ray radiation dose rate on Triple-Gate SOI FinFETs parameters. 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. Sept. 2014.
Texto completo (DOI)
Palavras-chave
Resumo
© 2014 IEEE.In this work, the effect of the X-Ray radiation dose rate on n and p Triple-Gate SOI FinFET device characteristics is investigated. The threshold voltage shift, the subthreshold slope shift, the maximum transconductance and the ION/IOFF ratio were analyzed. In nMuGFETs the characteristics are always degraded due to the increase of the back conduction and for pMuGFETs, the devices have their subthreshold region characteristics improved by the decrease of back conduction. Lower dose rates of X-Ray radiation are shown to be more effective for the trapping of charges and the formation of interface traps than the use of higher doses rates.