Impact of substrate bias on the mobility of n-type-gate SOI nanowire MOSFETs

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dc.contributor.advisorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorBERGAMASHI, F. E.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorCASSE, M.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorPAZ, B. C.
dc.contributor.authorMarcelo Antonio Pavanello
dc.date.accessioned2022-01-12T21:56:22Z
dc.date.available2022-01-12T21:56:22Z
dc.date.issued2019-08-05
dc.description.abstractThis work presents the impact of substrate bias on the mobility of high-κ gate n-type Ω-gate SOI nanowire MOS transistors. The analysis is performed through experimental measurements and tridimensional numerical simulations. Mobility and its degradation coefficients are extracted using the Y-function method. The results showed that back bias increase has a beneficial effect on mobility for negative voltages and up to 10V, due to reduction in surface roughness scattering. But for higher back bias levels, mobility starts undergoing severe degradation. Simulations show that strong positive back bias drags the inversion layer down to the second interface, where mobility is shown to be lower.
dc.identifier.citationBERGAMASHI, F. E.; BARRAUD, S.; CASSE, M.; VINET, M.; FAYNOT, O.; PAZ, B. C.; PAVANELLO, M. A. Impact of substrate bias on the mobility of n-type-gate SOI nanowire MOSFETs. SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices, Aug. 2019.
dc.identifier.doi10.1109/SBMicro.2019.8919463
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3720
dc.relation.ispartofSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rightsAcesso Restrito
dc.subject.otherlanguageMobility
dc.subject.otherlanguageNanowire
dc.subject.otherlanguageSOI MOSFET
dc.subject.otherlanguageSubstrate bias
dc.titleImpact of substrate bias on the mobility of n-type-gate SOI nanowire MOSFETs
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-85077180171
fei.scopus.subjectBeneficial effects
fei.scopus.subjectDegradation coefficients
fei.scopus.subjectFunction methods
fei.scopus.subjectNanowire MOSFETs
fei.scopus.subjectNegative voltage
fei.scopus.subjectSOI-MOSFETs
fei.scopus.subjectSubstrate bias
fei.scopus.subjectSurface roughness scattering
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85077180171&origin=inward
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