Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment
| dc.contributor.author | GALEMBECK, E. H. S. | |
| dc.contributor.author | RENAUZ, C. | |
| dc.contributor.author | FLANDRE, D. | |
| dc.contributor.author | Salvador Gimenez | |
| dc.date.accessioned | 2022-01-12T22:01:42Z | |
| dc.date.available | 2022-01-12T22:01:42Z | |
| dc.date.issued | 2013-10-2013 | |
| dc.identifier.citation | GALEMBECK, E. H. S.; RENAUZ, C.; FLANDRE, D.; GIMENEZ, S. Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013. | |
| dc.identifier.doi | 10.1109/S3S.2013.6716568 | |
| dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/4086 | |
| dc.relation.ispartof | 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 | |
| dc.rights | Acesso Restrito | |
| dc.title | Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment | |
| dc.type | Artigo de evento | |
| fei.scopus.citations | 10 | |
| fei.scopus.eid | 2-s2.0-84897699331 | |
| fei.scopus.updated | 2025-02-01 | |
| fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84897699331&origin=inward |