Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment

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dc.contributor.authorGALEMBECK, E. H. S.
dc.contributor.authorRENAUZ, C.
dc.contributor.authorFLANDRE, D.
dc.contributor.authorSalvador Gimenez
dc.date.accessioned2022-01-12T22:01:42Z
dc.date.available2022-01-12T22:01:42Z
dc.date.issued2013-10-2013
dc.identifier.citationGALEMBECK, E. H. S.; RENAUZ, C.; FLANDRE, D.; GIMENEZ, S. Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment. 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013, Oct. 2013.
dc.identifier.doi10.1109/S3S.2013.6716568
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4086
dc.relation.ispartof2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
dc.rightsAcesso Restrito
dc.titleExperimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment
dc.typeArtigo de evento
fei.scopus.citations10
fei.scopus.eid2-s2.0-84897699331
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84897699331&origin=inward
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