Halo optimization for 0.13μm SOI CMOS technology
N/D
Tipo de produção
Artigo de evento
Data de publicação
2008
Texto completo (DOI)
Periódico
ECS Transactions
Editor
Texto completo na Scopus
Citações na Scopus
2
Autores
Agopian P.G.D.
Arrabaca J.M.
Martino J.A.
Orientadores
Resumo
This work presents the study of HALO implantation angle and its concentration influence on deep-submicrometer partially depleted SOI nMOSFETs electric characteristics. This study was performed through the threshold voltage and subthreshold slope analysis. As the implantation angle and the doping concentration of the HALO were varied, a large threshold voltage variation was obtained. It is demonstrated that for 0.13μm SOI CMOS technology devices, the most efficient HALO implantation occurs for 50 degrees and concentration range from 1.2×1018 cm-3 to 1.8×10 18cm-33. © The Electrochemical Society.
Citação
AGOPIAN, P. G. D.; ARRABACA, J. M.; MARTINO, J. A. Halo optimization for 0.13μm SOI CMOS technology. ECS Transactions, v. 14, n. 1, p. 111-118, Sept. 2008.
Palavras-chave
Keywords
Assuntos Scopus
Concentration ranges; Doping concentrations; Electric characteristics; Partially depleted; SOI CMOS; Soi nmosfets; Sub micrometers; Subthreshold slopes; Threshold voltage variations