Halo optimization for 0.13μm SOI CMOS technology

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dc.contributor.authorAgopian P.G.D.
dc.contributor.authorArrabaca J.M.
dc.contributor.authorMartino J.A.
dc.date.accessioned2022-01-12T22:04:48Z
dc.date.available2022-01-12T22:04:48Z
dc.date.issued2008
dc.description.abstractThis work presents the study of HALO implantation angle and its concentration influence on deep-submicrometer partially depleted SOI nMOSFETs electric characteristics. This study was performed through the threshold voltage and subthreshold slope analysis. As the implantation angle and the doping concentration of the HALO were varied, a large threshold voltage variation was obtained. It is demonstrated that for 0.13μm SOI CMOS technology devices, the most efficient HALO implantation occurs for 50 degrees and concentration range from 1.2×1018 cm-3 to 1.8×10 18cm-33. © The Electrochemical Society.
dc.description.firstpage111
dc.description.issuenumber1
dc.description.lastpage118
dc.description.volume14
dc.identifier.citationAGOPIAN, P. G. D.; ARRABACA, J. M.; MARTINO, J. A. Halo optimization for 0.13μm SOI CMOS technology. ECS Transactions, v. 14, n. 1, p. 111-118, Sept. 2008.
dc.identifier.doi10.1149/1.2956024
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4296
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleHalo optimization for 0.13μm SOI CMOS technology
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-57749177067
fei.scopus.subjectConcentration ranges
fei.scopus.subjectDoping concentrations
fei.scopus.subjectElectric characteristics
fei.scopus.subjectPartially depleted
fei.scopus.subjectSOI CMOS
fei.scopus.subjectSoi nmosfets
fei.scopus.subjectSub micrometers
fei.scopus.subjectSubthreshold slopes
fei.scopus.subjectThreshold voltage variations
fei.scopus.updated2024-11-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=57749177067&origin=inward
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