Low-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire
Nenhuma Miniatura disponível
Citações na Scopus
0
Tipo de produção
Artigo de evento
Data
2018-08-27
Autores
MOLTO, A. R.
PAZ, B. C.
CASSE, M.
BARRAUD, S.
REIMBOLD, G.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
PAZ, B. C.
CASSE, M.
BARRAUD, S.
REIMBOLD, G.
VINET, M.
FAYNOT, O.
Marcelo Antonio Pavanello
Orientador
Periódico
33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
Título da Revista
ISSN da Revista
Título de Volume
Citação
MOLTO, A. R.; PAZ, B. C.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O. Low-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
Texto completo (DOI)
Palavras-chave
Resumo
This work presents a Low-Frequency Noise (LFN) investigation in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors working in linear region with VDS = 50mV. Long-channel devices of 1μ {m and 10μ {m are evaluated. A wide range of fin width is considered in the LFN analysis, from 15nm up to 105nm. The results showed a flicker noise (1/FF) behavior and a decrease of normalized noise SID/IDs2 with gate voltage overdrive increase for frequencies bellow 500Hz. Above this frequency, it was possible to see that generation and recombination noise with 1/f2 decay overlaps the flicker noise, becoming the predominant noise source. The cut-off frequency increases with gate voltage overdrive while the gamma exponent decreases. Gamma reduces from 1.3 to 0.9 and from 0.95 to 0.65 for devices with channel length of 1 μ {m and 10μ {m, respectively. A major noise variation of about one order of magnitude with gate voltage overdrive increase was observed in devices of 1 μ {m long in comparison to channel length of 10μ {m. The devices showed weak noise dependence on fin width due to mobility decrease as nanowires become narrower.