Low-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire

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dc.contributor.authorMOLTO, A. R.
dc.contributor.authorPAZ, B. C.
dc.contributor.authorCASSE, M.
dc.contributor.authorBARRAUD, S.
dc.contributor.authorREIMBOLD, G.
dc.contributor.authorVINET, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T21:57:05Z
dc.date.available2022-01-12T21:57:05Z
dc.date.issued2018-08-27
dc.description.abstractThis work presents a Low-Frequency Noise (LFN) investigation in fully depleted n-type Silicon-On-Insulator (SOI) nanowire transistors working in linear region with VDS = 50mV. Long-channel devices of 1μ {m and 10μ {m are evaluated. A wide range of fin width is considered in the LFN analysis, from 15nm up to 105nm. The results showed a flicker noise (1/FF) behavior and a decrease of normalized noise SID/IDs2 with gate voltage overdrive increase for frequencies bellow 500Hz. Above this frequency, it was possible to see that generation and recombination noise with 1/f2 decay overlaps the flicker noise, becoming the predominant noise source. The cut-off frequency increases with gate voltage overdrive while the gamma exponent decreases. Gamma reduces from 1.3 to 0.9 and from 0.95 to 0.65 for devices with channel length of 1 μ {m and 10μ {m, respectively. A major noise variation of about one order of magnitude with gate voltage overdrive increase was observed in devices of 1 μ {m long in comparison to channel length of 10μ {m. The devices showed weak noise dependence on fin width due to mobility decrease as nanowires become narrower.
dc.identifier.citationMOLTO, A. R.; PAZ, B. C.; CASSE, M.; BARRAUD, S.; REIMBOLD, G.; VINET, M.; FAYNOT, O. Low-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.
dc.identifier.doi10.1109/SBMicro.2018.8511548
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3769
dc.relation.ispartof33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018
dc.rightsAcesso Restrito
dc.subject.otherlanguageFully depleted SOI
dc.subject.otherlanguageLow-frequency noise
dc.subject.otherlanguageNanowire
dc.titleLow-frequency noise investigation in long-channel fully depleted inversion mode n-type SOI nanowire
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-85057400690
fei.scopus.subjectFully depleted SOI
fei.scopus.subjectInversion modes
fei.scopus.subjectLong channel devices
fei.scopus.subjectLow-Frequency Noise
fei.scopus.subjectNanowire transistors
fei.scopus.subjectNoise variations
fei.scopus.subjectNormalized noise
fei.scopus.subjectRecombination noise
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85057400690&origin=inward
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