Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:05:48Z
dc.date.available2022-01-12T22:05:48Z
dc.date.issued2005-10-03
dc.description.firstpage72
dc.description.lastpage73
dc.description.volume2005
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Saturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments. Proceedings - IEEE International SOI Conference, v. 2005, p. 72-73, October, 2005.
dc.identifier.doi10.1109/SOI.2005.1563538
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4364
dc.relation.ispartofProceedings - IEEE International SOI Conference
dc.rightsAcesso Restrito
dc.titleSaturation threshold voltage degradation in deep-submicrometer fully depleted SOI nMOSFETs operating in cryogenic environments
dc.typeArtigo de evento
fei.scopus.citations0
fei.scopus.eid2-s2.0-33744720011
fei.scopus.updated2025-02-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=33744720011&origin=inward
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