Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve
dc.contributor.author | Cunha A.I.A. | |
dc.contributor.author | Pavanello M.A. | |
dc.contributor.author | Trevisoli R.D. | |
dc.contributor.author | Galup-Montoro C. | |
dc.contributor.author | Schneider M.C. | |
dc.date.accessioned | 2019-08-19T23:45:09Z | |
dc.date.available | 2019-08-19T23:45:09Z | |
dc.date.issued | 2011 | |
dc.description.abstract | In this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved. | |
dc.description.firstpage | 89 | |
dc.description.issuenumber | 1 | |
dc.description.lastpage | 94 | |
dc.description.volume | 56 | |
dc.identifier.citation | Cunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011. | |
dc.identifier.doi | 10.1016/j.sse.2010.10.011 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/1083 | |
dc.relation.ispartof | Solid-State Electronics | |
dc.rights | Acesso Aberto | |
dc.subject.otherlanguage | DG-MOSFET | |
dc.subject.otherlanguage | Parameter extraction | |
dc.subject.otherlanguage | Threshold voltage | |
dc.title | Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve | |
dc.type | Artigo | |
fei.scopus.citations | 23 | |
fei.scopus.eid | 2-s2.0-78751648930 | |
fei.scopus.subject | Channel length | |
fei.scopus.subject | DG MOSFETs | |
fei.scopus.subject | Diffusion components | |
fei.scopus.subject | Direct determination | |
fei.scopus.subject | Double-gate MOSFETs | |
fei.scopus.subject | Function methods | |
fei.scopus.subject | Linear region | |
fei.scopus.subject | Mobility variation | |
fei.scopus.subject | MOSFETs | |
fei.scopus.subject | Numerical simulation | |
fei.scopus.subject | Silicon films | |
fei.scopus.subject | Simulation result | |
fei.scopus.subject | Temperature range | |
fei.scopus.subject | Temperature values | |
fei.scopus.subject | Thermal voltage | |
fei.scopus.subject | Threshold condition | |
fei.scopus.subject | Transconductance-to-current ratio | |
fei.scopus.updated | 2024-07-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78751648930&origin=inward |