Direct determination of threshold condition in DG-MOSFETs from the g m/ID curve

Página do item simplificado
dc.contributor.authorCunha A.I.A.
dc.contributor.authorPavanello M.A.
dc.contributor.authorTrevisoli R.D.
dc.contributor.authorGalup-Montoro C.
dc.contributor.authorSchneider M.C.
dc.date.accessioned2019-08-19T23:45:09Z
dc.date.available2019-08-19T23:45:09Z
dc.date.issued2011
dc.description.abstractIn this work we apply the current-based threshold voltage definition (equality between the drift and diffusion components of drain current) to intrinsic symmetric double-gate MOSFETs. We show that the half maximum point of the gm/ID (transconductance-to-current ratio) curve in the linear region corresponds exactly to the condition IDdrift = I Ddiff when mobility variation is neglected. Numerical simulations show that the threshold voltages determined from the gm/ID curve and from the IDdrift = IDdiff condition differ by about φt/2 (one half of the thermal voltage) when considering realistic mobility variations. Simulation results show that the threshold voltages determined with the gm/ID procedure are close to those obtained with the Y (=ID/gm) function method for a considerable range of silicon film thicknesses, channel lengths, and temperature values. The current-based procedure has also been successfully applied experimentally to a FinFET over a wide temperature range. © 2010 Elsevier Ltd. All rights reserved.
dc.description.firstpage89
dc.description.issuenumber1
dc.description.lastpage94
dc.description.volume56
dc.identifier.citationCunha, Ana Isabela Araújo; PAVANELLO, Marcelo A.; TREVISOLI, Renan Doria; GALUP-MONTORO, C.; Schneider, Marcio Cherem. Direct determination of threshold condition in DG-MOSFETs from the gm/ID curve. Solid-State Electronics, v. 56, p. 89-94, 2011.
dc.identifier.doi10.1016/j.sse.2010.10.011
dc.identifier.issn0038-1101
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/1083
dc.relation.ispartofSolid-State Electronics
dc.rightsAcesso Aberto
dc.subject.otherlanguageDG-MOSFET
dc.subject.otherlanguageParameter extraction
dc.subject.otherlanguageThreshold voltage
dc.titleDirect determination of threshold condition in DG-MOSFETs from the g m/ID curve
dc.typeArtigo
fei.scopus.citations23
fei.scopus.eid2-s2.0-78751648930
fei.scopus.subjectChannel length
fei.scopus.subjectDG MOSFETs
fei.scopus.subjectDiffusion components
fei.scopus.subjectDirect determination
fei.scopus.subjectDouble-gate MOSFETs
fei.scopus.subjectFunction methods
fei.scopus.subjectLinear region
fei.scopus.subjectMobility variation
fei.scopus.subjectMOSFETs
fei.scopus.subjectNumerical simulation
fei.scopus.subjectSilicon films
fei.scopus.subjectSimulation result
fei.scopus.subjectTemperature range
fei.scopus.subjectTemperature values
fei.scopus.subjectThermal voltage
fei.scopus.subjectThreshold condition
fei.scopus.subjectTransconductance-to-current ratio
fei.scopus.updated2024-03-04
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=78751648930&origin=inward
Arquivos
Coleções
Artigos