Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective

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dc.contributor.authorMARTINO, J. A.
dc.contributor.authorAGOPIAN, P. G. D.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:00:42Z
dc.date.available2022-01-12T22:00:42Z
dc.date.issued2014-10-31
dc.description.abstract© 2014 IEEE.This paper will discuss the analog behavior of the main insulated gate field effect transistor (FET) roadmap, like Silicon-On-Insulator (SOI) MOSFET, Graded-Channel (GC) SOI MOSFET, triple-gate SOI FinFET and Tunnel-FET (TFET) devices. The main analog Figures of Merit (FoM) like transconductance over drain current ratio, Early voltage, intrinsic voltage gain and unit gain frequency will be analyzed.
dc.identifier.citationMARTINO, J. A.; AGOPIAN, P. G. D.; SIMOEN, E.; CLAEYS, C. Field effect transistors: From mosfet to Tunnel-Fet analog performance perspective. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Oct. 2014.
dc.identifier.doi10.1109/ICSICT.2014.7021276
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4018
dc.relation.ispartofProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
dc.rightsAcesso Restrito
dc.titleField effect transistors: From mosfet to Tunnel-Fet analog performance perspective
dc.typeArtigo de evento
fei.scopus.citations3
fei.scopus.eid2-s2.0-84946691311
fei.scopus.subjectAnalog behavior
fei.scopus.subjectAnalog figures of merits
fei.scopus.subjectAnalog performance
fei.scopus.subjectGain frequencies
fei.scopus.subjectGraded channels
fei.scopus.subjectIntrinsic voltage gains
fei.scopus.subjectSilicon-on-insulator mosfet
fei.scopus.subjectTunnel FET (TFET)
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84946691311&origin=inward
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