Simple analytical model to study the ZTC bias point in FinFETs

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dc.contributor.authorBELLODI, M.
dc.contributor.authorCAMILLO, L. M.
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorCLAEYS, C.
dc.date.accessioned2022-01-12T22:05:19Z
dc.date.available2022-01-12T22:05:19Z
dc.date.issued2007-05-11
dc.description.abstractIn this work we present a simple analytical model to study the Zero Temperature Coefficient (ZTC) bias point in FinFETs operating from room temperature up to 573 K. Three-dimensional simulations are carried out and compared with experimental results to qualify the results. © The Electrochemical Society.
dc.description.firstpage205
dc.description.issuenumber4
dc.description.lastpage209
dc.description.volume6
dc.identifier.citationBELLODI, M.; CAMILLO, L. M.; MARTINO, J. A.; SIMOEN, E.; CLAEYS, C. Simple analytical model to study the ZTC bias point in FinFETs. ECS Transactions, v. 6, n. 4, p. 205-209, Mayo, 2007.
dc.identifier.doi10.1149/1.2728862
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4331
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleSimple analytical model to study the ZTC bias point in FinFETs
dc.typeArtigo de evento
fei.scopus.citations2
fei.scopus.eid2-s2.0-45249103332
fei.scopus.subjectAnalytical modelling
fei.scopus.subjectbias points
fei.scopus.subjectElectrochemical Society (ECS)
fei.scopus.subjectExperimental results
fei.scopus.subjectFinFETs
fei.scopus.subjectInternational symposium
fei.scopus.subjectRoom-temperature (RT)
fei.scopus.subjectSilicon on insulator (SOI) technology
fei.scopus.subjectThree dimensional (3D) simulations
fei.scopus.subjectZero temperatures
fei.scopus.updated2025-01-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249103332&origin=inward
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