Low temperature operation of undoped body triple-gate FinFETs from an analog perspective

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dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorMARTINO, J. A.
dc.contributor.authorSIMOEN, E.
dc.contributor.authorROOYACKERS R.
dc.contributor.authorCOLLAERT, N.
dc.contributor.authorCLAEYS, C
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.date.accessioned2022-01-12T22:05:13Z
dc.date.available2022-01-12T22:05:13Z
dc.date.issued2007-09-06
dc.description.abstractThis paper studies the temperature reduction influence on some analog figures of merit of n-type triple-gate FinFETs with undoped body, using DC measurements. It is demonstrated that the temperature reduction improves the transconductance over drain current ratio in any operational region. On the other hand, the output conductance is degraded when the temperature is reduced. The combination of these effects shows that the intrinsic gain of a L=90 nm FinFET is degraded by 3 dB when the temperature reduces from 300 K down to 100 K. A comparison with planar single gate fully depleted SOI reveals that the temperature degradation of the output conductance in FinFETs is less temperature-dependent. © The Electrochemical Society.
dc.description.firstpage19
dc.description.issuenumber1
dc.description.lastpage27
dc.description.volume9
dc.identifier.citationPAVANELLO, M. A.; MARTINO, J. A.; SIMOEN, E.; ROOYACKERS R.; COLLAERT, N.; CLAEYS, C. Low temperature operation of undoped body triple-gate FinFETs from an analog perspective. ECS Transactions, v. 9, n. 1, p. 19-27, 2007.
dc.identifier.doi10.1149/1.2766870
dc.identifier.issn1938-5862
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/4324
dc.relation.ispartofECS Transactions
dc.rightsAcesso Restrito
dc.titleLow temperature operation of undoped body triple-gate FinFETs from an analog perspective
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-45249123219
fei.scopus.subjectCurrent ratios
fei.scopus.subjectDC measurements
fei.scopus.subjectElectrochemical Society (ECS)
fei.scopus.subjectFigures of Merit (FOM)
fei.scopus.subjectFinFETs
fei.scopus.subjectFully depleted SOI (FD SOI)
fei.scopus.subjectLow temperature (LTR)
fei.scopus.subjectMicroelectronics technology
fei.scopus.subjectOutput conductance
fei.scopus.subjectSingle gate (SG)
fei.scopus.subjecttemperature degradation
fei.scopus.subjecttemperature dependent
fei.scopus.subjectTemperature reduction
fei.scopus.subjectTriple Gate
fei.scopus.subjectUndoped body
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=45249123219&origin=inward
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