Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors
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93
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Artigo
Data
2012-01-05
Autores
TREVISOLI, R. D.
Rodrido Doria
Michelly De Souza
DAS, S.
FERAIN, I.
Marcelo Antonio Pavanello
Rodrido Doria
Michelly De Souza
DAS, S.
FERAIN, I.
Marcelo Antonio Pavanello
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Periódico
IEEE Transactions on Electron Devices
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TREVISOLI, R. D.; DORIA, R.; DE SOUZA, M.; PAVANELLO, M. A.; DAS, S. Surface-potential-based drain current analytical model for triple-gate junctionless nanowire transistors. IEEE Transactions on Electron Devices, v. 59, n. 12, p. 3510-3518, 2012.
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This paper proposes a drain current model for triple-gate n-type junctionless nanowire transistors. The model is based on the solution of the Poisson equation. First, the 2-D Poisson equation is used to obtain the effective surface potential for long-channel devices, which is used to calculate the charge density along the channel and the drain current. The solution of the 3-D Laplace equation is added to the 2-D model in order to account for the short-channel effects. The proposed model is validated using 3-D TCAD simulations where the drain current and its derivatives, the potential, and the charge density have been compared, showing a good agreement for all parameters. Experimental data of short-channel devices down to 30 nm at different temperatures have been also used to validate the model. © 2012 IEEE.