Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths

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dc.contributor.authorRodrigo Doria
dc.contributor.authorTREVISOLI, R.
dc.contributor.authorMichelly De Souza
dc.contributor.authorMarcelo Antonio Pavanello
dc.contributor.authorVINET, M.
dc.contributor.authorCASSE, M.
dc.contributor.authorFAYNOT, O.
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-1361-3650
dc.contributor.authorOrcidhttps://orcid.org/0000-0001-6472-4807
dc.contributor.authorOrcidhttps://orcid.org/0000-0003-4448-4337
dc.date.accessioned2022-01-12T21:57:29Z
dc.date.available2022-01-12T21:57:29Z
dc.date.issued2018-10-18
dc.description.abstractThis paper aims at presenting, for the first time, an experimental comparative analysis between the main electrical parameters of Junctionless (JNT) and inversion mode nanowire (IM) transistors fabricated in SOI technology down to channel length of 10 nm. The analysis has shown that JNTs present larger immunity to SCEs with respect to IM nanowires of similar dimensions. However, JNTs have shown poorer Ion than IM devices, which could be compensated through the application of multifin JNTs, at cost of increasing area consumption.
dc.description.firstpage1
dc.description.lastpage3
dc.description.volume2018-March
dc.identifier.citationDORIA, R.; TREVISOLI, R.; DE SOUZA, M.; PAVANELLO, M. A.; VINET, M.; CASSE, M.; FAYNOT, O. Experimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths. 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017, p.1-3, Oct. 2018.
dc.identifier.doi10.1109/S3S.2017.8308749
dc.identifier.urihttps://repositorio.fei.edu.br/handle/FEI/3796
dc.relation.ispartof2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
dc.rightsAcesso Restrito
dc.subject.otherlanguageDiBL
dc.subject.otherlanguageJunctioless transistors
dc.subject.otherlanguageSOI Technology
dc.subject.otherlanguageSubthreshold swing
dc.subject.otherlanguageTransconductance
dc.subject.otherlanguageUndoped Nanowires
dc.titleExperimental comparative analysis between junctionless and inversion mode nanowire transistors down to 10 nm-long channel lengths
dc.typeArtigo de evento
fei.scopus.citations1
fei.scopus.eid2-s2.0-85047520345
fei.scopus.subjectChannel length
fei.scopus.subjectComparative analysis
fei.scopus.subjectDiBL
fei.scopus.subjectElectrical parameter
fei.scopus.subjectInversion modes
fei.scopus.subjectNanowire transistors
fei.scopus.subjectSOI technology
fei.scopus.subjectSubthreshold swing
fei.scopus.updated2024-07-01
fei.scopus.urlhttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85047520345&origin=inward
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