Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors
dc.contributor.advisorOrcid | https://orcid.org/0000-0001-6472-4807 | |
dc.contributor.author | SILVA, L. M. B. DA | |
dc.contributor.author | Marcelo Antonio Pavanello | |
dc.contributor.author | CASSÉ, M. | |
dc.contributor.author | BARRAUD, S. | |
dc.contributor.author | VINET, M. | |
dc.contributor.author | FAYNOT, O. | |
dc.contributor.author | Michelly De Souza | |
dc.date.accessioned | 2023-09-01T06:03:48Z | |
dc.date.available | 2023-09-01T06:03:48Z | |
dc.date.issued | 2023-10-05 | |
dc.description.abstract | © 2023 Elsevier LtdThis work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors. | |
dc.description.volume | 208 | |
dc.identifier.citation | SILVA, L. M. B. DA; PAVANELLO, M. A.; CASSÉ, M.; BARRAUD, S.; VINET, M.; FAYNOT, O.; DE SOUZA, M. Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors. Solid-State Electronics, v. 208, oct. 2023. | |
dc.identifier.doi | 10.1016/j.sse.2023.108737 | |
dc.identifier.issn | 0038-1101 | |
dc.identifier.uri | https://repositorio.fei.edu.br/handle/FEI/5082 | |
dc.relation.ispartof | Solid-State Electronics | |
dc.rights | Acesso Restrito | |
dc.subject.otherlanguage | Electrical characterization | |
dc.subject.otherlanguage | MOSFET | |
dc.subject.otherlanguage | Nanowire transistors | |
dc.subject.otherlanguage | Parameter extraction | |
dc.subject.otherlanguage | Series resistance | |
dc.subject.otherlanguage | SOI | |
dc.subject.otherlanguage | Variability | |
dc.title | Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors | |
dc.type | Artigo | |
fei.scopus.citations | 1 | |
fei.scopus.eid | 2-s2.0-85168416879 | |
fei.scopus.subject | Electrical characterization | |
fei.scopus.subject | Inversion modes | |
fei.scopus.subject | MOS-FET | |
fei.scopus.subject | MOSFETs | |
fei.scopus.subject | Nanowire transistors | |
fei.scopus.subject | Parameters extraction | |
fei.scopus.subject | Series resistances | |
fei.scopus.subject | SOI | |
fei.scopus.subject | Source/drain series resistances | |
fei.scopus.subject | Variability | |
fei.scopus.updated | 2024-12-01 | |
fei.scopus.url | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85168416879&origin=inward |